EDC (B-TECH Electronics and Communication Engineering 3rd)

SECTION-A

CONDUCTING MATERIALS:

Review of energy bands, description of materials, drift velocity, collision time, Mean free path, mobility,

conductivity, relaxation time, factors affecting conductivity of materials, types of thermal conductivity,

Wiedmann-Franz law, super conductivity, effect of magnetic field, conducting materials, applications.

SECTION-B

SEMICONDUCTORS, CONSTRUCTION AND CHARACTERISTICS OF DEVICES:

Review of Si and Ge as semiconducting materials, Continuity Equation, P-N junction, Drift & Diffusion,

Diffusion & Transition capacitances of P-N junction.

Brief introduction to Planar Technology for device fabrication. metal -semiconductor junctions (ohmic and

non-ohmic), breakdown mechanisms in p-n junction, zener diode, electrical and optical excitation in diodes,

LED, solar cells and photo-detectors. And characteristics.

SECTION-C

Transistors: Metal-semiconductor-field-effect-transistors (MESFET), Metal-insulator-semiconductor-fieldeffect-transistors

(MISFET), Metal oxide semiconductor field effect transistor (MOSFET): Construction,

Operation and characteristics of above devices.

Bipolar junction transistors: Fundamentals of BJT operation, amplification with BJTs,

SECTION –D

SOME SPECIAL DEVICES:

Photodiodes, photo detectors, solar cell, light emitting diodes, semiconductor lasers, light emitting materials.

Tunnel Diode: degenerate semiconductors, IMPATT diode; The transferred electron mechanism: The

GUNN diode.P-N-P-N diode, semiconductor controlled rectifier (SCR), bilateral devices: DIAC, TRIAC,

IGBT